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BAW 79D E6327

BAW 79D E6327

  • 厂商:

    EUPEC(英飞凌)

  • 封装:

    TO-243AA

  • 描述:

    SWITCHING AND RECTIFIER DIODES

  • 数据手册
  • 价格&库存
BAW 79D E6327 数据手册
BAW78.../BAW79... Silicon Switching Diodes • Switching applications • High breakdown voltage • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 BAW78D  BAW79D !  ! Type Package Configuration Marking BAW78D BAW79D SOT89 SOT89 single common cathode GD GH Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Value Diode reverse voltage VR 400 Peak reverse voltage VRM 400 Forward current IF 1 Peak forward current I FM 1 Peak forward current I FM 1 Surge forward current, t = 1 µs I FS 10 Non-repetitive peak surge forward current I FSM Total power dissipation Ptot BAW79D, TS ≤ 115°C 1 Storage temperature T stg 1Pb-containing A W 1 Tj V - BAW78D, TS ≤ 125°C Junction temperature Unit 150 °C -65 ... 150 package may be available upon special request 1 2007-04-20 BAW78.../BAW79... Thermal Resistance Parameter Symbol Junction - soldering point 1) RthJS Value Unit K/W BAW78D ≤ 25 BAW79D ≤ 35 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics 400 V Breakdown voltage V(BR) I(BR) = 100 µA Reverse current IR VR = 400 V - - - - VR = 400 V, TA = 150 °C µA 1 50 Forward voltage V VF IF = 1 A - - 1.6 IF = 2 A - - 2 CT - 10 - pF trr - 1 - µs AC Characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recovery time IF = 200mA, IR = 200mA, measured at IR = 20mA , RL = 100Ω Test circuit for reverse recovery time D.U.T. ΙF Puls generator: tp = 10µs, D = 0.05, tr = 0.6ns, Ri = 50Ω Oscillograph EHN00019 1For Oscillograp: R = 50Ω, tr = 0.35ns C ≤ 1pF calculation of RthJA please refer to Application Note Thermal Resistance 2 2007-04-20 BAW78.../BAW79... Reverse current IR = ƒ (TA) Forward current IF = ƒ (VF) VR = 400V TA = 25°C ΙR BAW 78A...D 10 5 nA EHB00097 10 1 ΙF max 10 4 BAW 78A...D EHB00095 A 10 0 5 typ. 10 3 10 -1 5 10 2 10 -2 5 10 1 0 50 100 ˚C 10 -3 150 0 1 V TA Peak forward current IFM = ƒ (tp) 2 VF Forward current IF = ƒ (T S) BAW78D 10 2 EHB00100 1200 mA D = 0.005 0.01 0.02 0.05 0.1 0.2 A 10 1 1000 900 800 IF Ι FM BAW 79A...D 700 10 0 600 500 400 10 -1 300 tp D= T tp 200 100 T 10-2 10-6 10-5 10-4 10-3 10-2 0 0 10-1 s 100 15 30 45 60 75 90 105 120 °C 150 TS t 3 2007-04-20 BAW78.../BAW79... Forward current IF = ƒ (T S) BAW79D 1200 mA 1000 900 IF 800 700 600 500 400 300 200 100 0 0 15 30 45 60 75 90 105 120 °C 150 TS 4 2007-04-20 Package SOT89 BAW78.../BAW79... Package Outline 4.5 ±0.1 45˚ B 1.5 ±0.1 1) 1.6 ±0.2 0.2 MAX. 2 2.75 +0.1 -0.15 10˚ MAX. 1 ±0.2 1 0.15 4 ±0.25 1 ±0.1 1) 2.5 ±0.1 0.25 ±0.05 3 1.5 0.35 ±0.1 0.45 +0.2 -0.1 3 0.15 M B x3 0.2 B 1) Ejector pin markings possible Foot Print 1.2 1.0 2.5 2.0 0.8 0.8 0.7 Marking Layout (Example) BAW78D Type code Pin 1 2005, June Date code (YM) Manufacturer Standard Packing Reel ø180 mm = 1.000 Pieces/Reel Reel ø330 mm = 4.000 Pieces/Reel 0.2 4.6 12 8 Pin 1 4.3 5 1.6 2007-04-20 BAW78.../BAW79... Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 6 2007-04-20
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